2 Inner Mongolia Key Laboratory of Plant Stress Physiology and Molecular Biology, College of Life Sciences, Inner Mongolia Agricultural University, Hohhot, 010010, China
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Triticeae Genomics and Genetics, 2022, Vol. 13, No. 2 doi: 10.5376/tgg.2022.13.0002
Received: 14 Apr., 2022 Accepted: 23 Apr., 2022 Published: 21 May, 2022
Zhang J., Yin Q., Yan Z.J., Wan Y.Q., and Wang Y.Q., 2022, Molecular mechanism of silicon response to oat root under drought stress, Triticeae Genomics and Genetics, 13(2): 1-11 (doi:10.5376/tgg.2022.13.0002)
There are many reports that silicon has beneficial effects on plant growth and development under abiotic stress, the molecular mechanism of silicon affecting oats under drought stress is unclear. This test variety was introduced from Canada, Sweety. Na2SiO3·9H2O was used as the silicon source, and polyethylene glycol (PEG-6000) was used to simulate the drought stress environment. Normal growth as control, drought stress (25% PEG-6000), and silicon + drought stress (10 mmol/L Na2SiO3·9H2O + 25% PEG-6000) on the root of oats were analyzed by transcriptome analysis (176 555 single genes) in order to compare the differential genes of plants under the three treatments. Comparative transcriptomics analysis showed that silicon plays an important role in changing the expression levels of 234 genes under drought stress. GO enrichment analysis showed that the enrichment of related genes such as oxidoreductase activity, cellular nitrogen compound metabolism, and cellular macromolecular metabolism significantly increased, and these genes are inextricably linked to abiotic resistance, indicating that silicon may induce drought tolerance in oat seedlings. By studying the mechanism of silicon-mediated drought resistance, it provides a theoretical basis for the application of silicon in crop production in arid regions.
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